Funct. Mater. 2013; 20 (3): 321-328.
Peculiarities of ZnSe dissolution in H2O2—HBr -ethylene glycol (oxalic acid) etchant compositions
[1]V.Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauki Ave., 03028 Kyiv, Ukraine
[2]Institute for Scintillation Materials, STC "Institute for Single Crystals", National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001 Kharkiv, Ukraine
The process of chemical treatment of undoped and doped ZnSe crystals surfaces by bromine emerging solutions has been investigated. The depending of dissolution rate on the etchants composition, their mixing and temperature has been studied. Concentration bounds of polishing solutions have been determined. The surface state after chemical etching has been established using electron microscopy and low temperature photoluminescence. The etchants compositions for semiconductors chemical polishing have been optimized. The comparative characteristics of two etching compositions H2O2—HBr —ethylene glycol and H2O2—HBr —oxalic acid have been shown to obtain high-quality polished surface of zinc selenide.
1.B.D.Luft, V.A.Perevoshchikov, L.N.Vozmilova et al., Radio i sviaz', Moscow (1982) [in Russian].
2.V.A.Perevoshchikov, Vysokochistye Veshchestva, 2, 5 (1995).
3.V.N.Tomashyk, Z.F.Tomashyk, Neorgan.Materialy, 29, 717 (1993).
4.V.N.Tomashyk, Z.F.Tomashyk, Neorgan.Materialy, 30, 1498 (1994).
5.V.N.Tomashyk, Z.F.Tomashyk, A.V.Lubchenko, A.V.Fomin, Optoelektronika i Poluprovodnikovaya Tehnika, 28, 3 (1994).
6.V.N.Tomashyk, Neorgan.Materialy, 31, 313 (1995).
7.V.N.Tomashyk, Z.F.Tomashyk, Neorgan.Materialy, 33, 1451 (1997).
8.Z.F.Tomashyk, V.N.Tomashyk, Kondensir.Sredy i Mezhfaz.Granicy, 4, 336 (2002).
9.R.Tenne, H.Flaisher, R.Triboulet, Phys.Rev.B.:Condens.Matter., 29, 5799 (1984). http://dx.doi.org/10.1103/PhysRevB.29.5799
10.W.C.Hughes, C.Boney, M.A.L.Johnson et al., J.Cryst.Growth, 175/176, 546 (1997). http://dx.doi.org/10.1016/S0022-0248(96)01022-6
11.R.Tenne, R.Haak, R.Triboulet, Ber.Bunsen-Ges.Phys.Chem., 91, 597 (1987). http://dx.doi.org/10.1002/bbpc.19870910603
12.R.Tenne, Y.Mirovsky, Y.Greenstein, D.Cahen, J.Electrochem.Soc., 129, 1506 (1982). http://dx.doi.org/10.1149/1.2124193
13.A.Sagar, W.Lehmann, I.W.Faust, J.Appl.Phys., 39, 5336 (1968). http://dx.doi.org/10.1063/1.1655971
14.J.Gautron, C.Raisin, P.Lemasson, J.Phys.D.Appl.Phys., 15, 153 (1982). http://dx.doi.org/10.1088/0022-3727/15/1/017
15.N.Sankar, K.Ramachandrana, C.Sanjeeviraja, J.Cryst.Growth., 235, 195 (2002). http://dx.doi.org/10.1016/S0022-0248(01)02044-9