Funct. Mater. 2015; 22 (1): 34-39.

http://dx.doi.org/10.15407/fm22.01.034

Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering

V.Pidkova1, I.Brodnikovska2, Z.Duriagina1, V.Petrovskyy2

1Lviv Polytechnic National University, 12 Bandera Str., 79013 Lviv, Ukraine
2Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Kryzhanovskogo Str., 03680 Kyiv, Ukraine

Abstract: 

Dielectric layers of Al2O3, MgO, AlN and TiO2 were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO2/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed.

Keywords: 
structure, properties, oxide layers, nitride layers.
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