Funct. Mater. 2015; 22 (1): 34-39.

Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering

V.Pidkova1, I.Brodnikovska2, Z.Duriagina1, V.Petrovskyy2

1Lviv Polytechnic National University, 12 Bandera Str., 79013 Lviv, Ukraine
2Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Kryzhanovskogo Str., 03680 Kyiv, Ukraine


Dielectric layers of Al2O3, MgO, AlN and TiO2 were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO2/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed.

structure, properties, oxide layers, nitride layers.

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