Funct. Mater. 2015; 22 (3): 309-315.

http://dx.doi.org/10.15407/fm22.03.309

Effect of L-arginine on the optical properties, crystalline perfection and laser damage threshold of KDP crystals

E.I.Kostenyukova[1], O.N.Bezkrovnaya[1], V.F.Tkachenko[1], M.I.Kolybaeva[1], D.S.Sofronov[2], E.F.Dolzhenkova[1], A.V.Lopin[1], I.M.Pritula[1]

[1] Institute for Single Crystals, STC ”Institute for Single Crystals”, National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001 Kharkiv, Ukraine
[2] Institute for Scintillation Materials, STC ”Institute for Single Crystals”, National Academy of Sciences of Ukraine, 60 Lenin Ave., 61001 Kharkiv, Ukraine

Abstract: 

Potassium dihydrogen phosphate (KDP) single crystals doped with L-arginine amino acid were grown from aqueous solutions onto a point seed using the temperature reduction method. The incorporation of L-arg molecules into the crystal was verified by the methods of UV-vis-IR and FTIR spectroscopy. It was shown that the entering of L-arg into the matrix was accompanied with the increase of the volume of KDP:L-arg elementary cell by ~ 2·10-2 Å3 with respect to the one of the pure crystal. There was analyzed the influence of L-arg molecules on the value of laser damage threshold for different growth sectors of KDP crystal. The laser damage threshold of KDP:L-arg crystal was found to rise for the growth sector {101} and to diminish for the growth sector {100} with respect to the corresponding parameter of the pure crystal.

Keywords: 
dihydrogen phosphate, L-arginine amino acid, laser damage.
References: 

1. N.Zaitseva, L.Carman, Prog. Crystal Growth and Charact., 1, 43 (2001).

2. D.Xue, S.Zhang, J. Chem. Phys. Lett., 301, 449 (1999). http://dx.doi.org/10.1016/S0009-2614(99)00055-X

3. R.N.Shaikh, A.Mohd, M.D.Shirsat et al., J. Appl. Phys., 6, 42 (2014).

4. D.J.Dave, K.D.Parikh, B.B.Parekh et al., J. Optoelectron. Advance. Mater., 11, 602 (2009).

5. K.D.Parikh, D.J.Dave, B.B.Parekh et al., Bull. Mater. Science, 30, 105 (2007). http://dx.doi.org/10.1007/s12034-007-0019-4

6. S.Gunasekaran, S.Ponnusamy, R.Rajasekaran, Indian J. Phys., 78, 553 (2004).

7. J.Zyss, G.Berthier, J. Chem. Phys., 71, 75 (1979). http://dx.doi.org/10.1063/1.438380

8. P.Kumaresan, S.Moorthy Babu, P.M.Anbarasan, Opt. Mater., 30, 1361 (2007). http://dx.doi.org/10.1016/j.optmat.2007.07.002

9. I.Pritula, V.Gayvoronsky, Yu.Gromov et al., Opt. Commun., 282, 1141 (2009). http://dx.doi.org/10.1016/j.optcom.2008.11.043

10. S.Kumar, S.B.Rai, Indian J. Pure . Appl. Phys., 48, 251 (2010).

11. S.Singh, B.Lal, J..Cryst. Crowth, 312, 443 (2010). http://dx.doi.org/10.1016/j.jcrysgro.2009.10.063

12. V.F.Tkachenko, M.A.Rom, A.A.Babichenko, V.P.Kuznetsov, Instrum. Exper. Techn., 2, 277 (1992).

13. R.P.Pantaler, O.M.Smirnova, A.B.Blank, Functional Materials, 11, 784 (2004).

14. V.F.Tkachenko, M.A.Rom, USSR inventor?s certificate, 1702265 (1991).

15. I.M.Pritula, A.V.Kosinova, O.N.Bezkrovnaya et al., Opt. Mater., 35, 2429 (2013). http://dx.doi.org/10.1016/j.optmat.2013.06.046

16. I.M.Pritula, Y.N.Velikhov, in: Proc. of SPIE, ed. by R.B.Lal, D.O.Frazier, 3793, 202 (1999)

17. N.Y.Garces, K.T.Stevens, L.E.Halliburton et al., J. Cryst. Growth, 225, 435 (2001). http://dx.doi.org/10.1016/S0022-0248(01)00911-3

18. I.Pritula, O.Bezkrovnaya, M.Kolybayeva et al., Mater. Chem. Phys., 129, 777 (2011). http://dx.doi.org/10.1016/j.matchemphys.2011.04.080

19. Y.Asakuma, M.Nishimura, Q.Li et al., J. of Mol. Struct., 810, 7 (2007). http://dx.doi.org/10.1016/j.theochem.2007.01.041

20. D.Xu, D.Xue, H.Ratajczak, J. Mol. Struct., 740, 37 (2005). http://dx.doi.org/10.1016/j.molstruc.2005.01.016

21. X.Ren, D.Xu, D.Xue, J. Cryst. Growth, 310, 2005 (2008). http://dx.doi.org/10.1016/j.jcrysgro.2007.11.008

22. D.Xu, D.Xue, J. Cryst. Growth, 286, 108 (2006). http://dx.doi.org/10.1016/j.jcrysgro.2005.09.040

23. S.A.de Vries, P.Goedtkindt, S.L.Bennett et al., Phys. Rev. Lett., 80, 2229 (1998). http://dx.doi.org/10.1103/PhysRevLett.80.2229

24. F.Jona, G.Shirane, Ferroelectric Crystals, Pergamon Press, Oxford (1962).

25. K.Wang, C.Fang, J.Zhang et al., J. Cryst. Growth, 287, 478 (2006). http://dx.doi.org/10.1016/j.jcrysgro.2005.11.070

26. C.S.Liu, N.Kioussis, S.G.Demos, H.R.Radousky, Phys. Rev. Lett., 91, 15505 (2003). http://dx.doi.org/10.1103/PhysRevLett.91.015505

27. C.W.Carr, H.B.Radousky, S.G.Demos, Phys. Rev. Lett., 91, 127402 (2003). http://dx.doi.org/10.1103/PhysRevLett.91.127402

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