Funct. Mater. 2016; 23 (1): 088-091.

http://dx.doi.org/10.15407/fm23.01.088

Manufacture of sapphire ribbons with low dislocation density

R.I.Safronov, L.A.Litvinov, A.V.Voloshin, V.F.Bochkov

Institute for Single Crystals, STC "Institute for Single Crystals", National Academy of Sciences of Ukraine, 60 Nauky Ave., 61001 Kharkiv, Ukraine

Abstract: 

Uniform thermal field with the axial temperature gradient of 11.6 K/cm was formed in a cylindrical heater. There were obtained 15x85x300 mm3 sapphire ribbons with dislocation density up to 103 cm-2. The dislocation density of sapphire ribbons at the axial temperature gradient of 11.6 K/cm was found to be comparable with the one in the crystals obtained by the Czochralski and Kyropoulos methods.

Keywords: 
sapphire, EFG, Stepanov method, dislocation.

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