Funct. Mater. 2017; 24 (3): 372-375.

doi:https://doi.org/10.15407/fm24.03.372

Layered crystals FeIn2Se4, In4Se3 and heterojunctions on their basis

B.V.Kushnir, Z.D.Kovalyuk, V.M.Katerynchuk, V.V. Netyaga, I.G. Tkachuk

I.Frantsevich Institute for Problems of Materials Science of National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., Chernivtsi, 58001

Abstract: 

A new heterojunction (GP) p-FeIn2Se4-n-In4Se3 was formed by the mechanical contact of the FeIn2Se4 plate with the van der Waals surface of In4Se3. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis of electric and photovoltaic characteristics of the GP, a high-quality zone diagram was constructed.The region of spectral photosensitivity of p-FeIn2Se4-n-In4Se3 GP which is in the range 0.7-1.3 eV, is established.

Keywords: 
layered crystals, heterojunction, spectral characteristics.

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