Funct. Mater. 2020; 27 (2): 337-341.
Effect of annealing temperature on properties of P-N co-doped ZnO films
College of Science, Jilin Institute of Chemical Technology, 132022 Jilin, P.R. China
P-N co-doped ZnO films were grown on a quartz substrate by the radio-frequency magnetron sputtering technique using a mixture of N2 and Ar gases; then the films were annealed rapidly in air. Effect of annealing temperature on structural, electrical and optical properties of the P-N co-doped films was investigated. Results indicated that the electrical properties of the films were sensitive to the annealing temperature, and the conduction type could be changed from n-type to p-type with increasing the annealing temperature from 600°C to 800°C. The P-N co-doped p-type ZnO film had a resistivity of 32.43 Ω·cm, a hole concentration of 6.09·1017 cm-3 and a mobility of 0.78 cm2V-1s-1, respectively. The ZnO homojunction shows a rectifying characteristic.
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