Funct. Mater. 2023; 30 (3): 338-343.
Aluminum doped zinc oxide thin films with lower activation energy prepared by radio frequency magnetron sputtering
Institute of Mechanical and Manufacturing Engineering, Khwaja Fareed University of Engineering and Information Technology, Rahim Yar Khan, Pakistan
Thin films of aluminum-doped zinc oxide (AZO) with reduced activation energy have been obtained and studied. Thin aluminum-doped zinc oxide films were grown by RF magnetron sputtering on silicon and glass substrates with different oxygen content in working gases (Ar + O2). It was found that the activation energy of aluminum-doped zinc oxide films is about 0.03 eV and varies with the oxygen content.
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