Funct. Mater. 2025; 32 (1): 28-34.
doi:https://doi.org/10.15407/fm32.01.28
Growing Ge1-xSnx solid solutions on Ge, GaAs substrates
1 Urgench State University, 14 Kh.Alimdjan, Urgench, 220100, Uzbekistan
2Leipzig University, 10 Augustplatz, Leipzig 04109, Germany
Abstract:
Single-crystal films of the Ge1-xSnx solid solution were grown in the temperature range of 893-723 K at a cooling rate of 0.5-1.5 K/min from a limited tin solution-melt. The substrates were Ge(111) and GaAs(100) with a carrier concentration of n=(1÷5)·1017cm–3, n=(4÷7)·1017cm-3, respectively. The gap between the substrates was 0.65÷1.2 mm. The technological conditions for obtaining a GaAs- Ge1-xSnx heterostructure with a smooth substrate-film boundary were achieved, while the supercooling temperature was T=6.2 °C. The single crystallinity of the Ge1-xSnx 0 ≤ x ≤0.03) film was determined by X-ray diffractometry. The film photosensitivity covers the spectral region of 0.5-1.9 eV.
Keywords:
epitaxial layer, heterostructure, solid solution, hypothermia.
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