V.O.Novikov
Received November 11, 1997
Specific features of crystallization
and recrystallization processes in SnO2 films curring during
their annealing have been investigated. Formation possibility of some thermostable
high-disperse states in thin SnO2 films of non-equilibrium
structure has been shown as well as the possibility to make use of such
structure states to create gas sensors of desorption-semiconductor
type with high operating stability.