P.V.Galiy
Received May 4, 1998
Characteristics of radiative defects formation, accumulation
and radiolysis of CsI crystals under moderate energies of electron
irradiation at wide dose rates and dose ranges have been investigated
by thermostimulated exoelectron emission, Auger electron spectroscopy
and optical absorption spectroscopy. The limit values of dose rates
and absorbed doses of electron irradiation causing radiation defects
generation and accumulation at room temperature in crystal volume
and also the surface stoichiometry disruption have been evaluated.
The electron irradiation doses under which CsI occurs with cesium
coagulation in metal phase have been determined. A certain quasi periodic
connection of such process with irradiation dose was observed.