Correlation of deposition parameters, film thickness and mechanical stresses in a-C:H films on silicon substrates

A.V.Vasin, S.I.Khandozhko, L.A.Matveeva, A.G.Gontar*, A.M.Kutsay*


Institute of Semiconductor Physics, NAS of Ukraine, 45 Nauki pr., 01028 Šyiv-28, Ukraine
*Bakul Institute of Superhard Materials, NAS of Ukraine, 2 Avtozavodskaya St., 01074 Kyiv-74, Ukraine

Received January 31, 2000

Investigation results of mechanical stresses in hydrogenated carbon films on silicon substrates have been presented. Compressive stresses were measured by analysing of the substrate bend radius. It was shown that for films deposited on uncooled electrode, the mechanical stresses depend on the film thickness. Taking this into account, were the stresses measured correctly depending on the selfbias voltage. It was shown that the value of the compressive stress value correlates with the film density and microhardness.

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