A.V.Vasin, S.I.Khandozhko, L.A.Matveeva,
A.G.Gontar*, A.M.Kutsay*
Received January 31, 2000
Investigation results of mechanical stresses in hydrogenated
carbon films on silicon substrates have been presented. Compressive
stresses were measured by analysing of the substrate bend radius.
It was shown that for films deposited on uncooled electrode, the mechanical
stresses depend on the film thickness. Taking this into account, were
the stresses measured correctly depending on the selfbias voltage.
It was shown that the value of the compressive stress value correlates
with the film density and microhardness.