Effect of two-dimensional structure defects on dielectric properties of CdZnTe crystals

I.A.Klimenko*, V.K.Komar, V.P.Migal*, D.P.Nalivaiko*


Institute for Single Crystals, National Academy of Sciences of Ukraine, 60 Lenin Ave., Kharkiv 61001, Ukraine
*State Aerocosmic University "Kharkiv Aviation Institute", 17 Chkalov St., Kharkiv 61070, Ukraine

Received November 14, 1999

The relaxation character of photodielectric response in piezoelectric CdZnTe crystals is closely connected with elastic and electric fields of growth structure defects. The features of low frequency dependences of a complex dielectric constant on frequency, wavelength, temperature and coordinate are determined. In each of the diagrams epsilon*(lambda), epsilon*(T) and epsilon*(omega ) the character of internal fields generated by structure defects is represented individually. The analysis of these diagrams allows to identify three types of growth nonuniformities and show their distribution over the sample.

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