V.S.Nevolin, P.P.Shevchuk
Received July 21, 1998
Current-voltage characteristics of layer-by-layer etched
GdBaCuO/Si structures have been studied and analyzed as functions
of the silicon substrate conductivity type, its doping level, and
temperature. The GdBaCuO films were deposited using magnetron
sputtering without any buffer layers. The successive selective etching
of the structure allowed to reveal silicate and silicide layers formed
due to direct interaction of silicon with the stoichiometric GdBaCuO
film. Their electric conductivity has been studied and the band diagram
has been proposed for such structures basing on the study results.
In the current transport in that structure, the main part is played
by charge transfer mechanisms in the intermediate layer. These mechanisms
are compared with the charge transfer ones instructures including
a HTSC film on ion-implanted silicon.