V.Gnidash, B.Boyko, V.Kopach, G.Khripunov
Received April 1, 1999
A series of Cu-In-Se system thin films were deposited
by Low-Energy Ion-Molecular Beam technique (LE IMB). The influence
of In incident flux density on the structure and properties of
Cu-In-Se thin films has been investigated. An attempt
to create CuInSe2/CuIn3Se5 base structure
for thin film solar cell was made. P-i-n
and p-i-p+-n heterojunctions
have been prepared and analyzed in three of eight series of Cu-In-Se
samples.