V.D.Ryzhikov, N.G.Starzhinskiy, L.P.Gal'chinetskii,
S.N.Galkin, V.I.Silin
Received 22 March, 2000
Scintillation properties were studied of ZnSe crystals
grown by Bridgman-Stockbarger method and doped with Zn, Se, Te
either during the growth process or by annealing in the appropriate
atmosphere. It is shown that ZnSe crystals grown from charge of
stoichiometric composition (or, if extra chalcogene is present, after
subsequent annealing in Zn vapor) are characterised by minimum
level of afterglow and substantially increased X-ray luminescence
(RL) intensity, with its peak shifted from IR to red spectral region
(lamdamax = 630-640 nm). With low Te content and
high amount of oxygen-containing admixtures (CO/CTe > 0.2),
fast RL component with lambdamax = 590-600 nm is dominating.
A thermodynamical model is considered of interaction of isovalent
dopants affecting optoelectronic properties determined by radiation-stable
complexes VZn-TeSe, as well the role of competing
Zni-OSe centers in formation of scintillation properties
of ZnSe(Te) crystals.