Funct. Mater. 2026; 32 (1): 121-126.

doi:https://doi.org/10.15407/fm33.01.121

Advances in organic field-effect transistors with polymeric gate dielectrics: A short review

K. R. Rajesh1, C. S. Menon2, C. R. Indulal3

1 Post Graduate and Research Department of Physics, Sree Krishna College Guruvayur, affiliated to the University of Calicut, Thrissur, 680102, India
2 School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam, 686560, India
3 Department of Physics, St. Gregorios College, affiliated to the University of Kerala, Kottarakkara, 691531 India

Abstract: 

Organic field-effect transistors (OFETs) have emerged as promising components in flexible and low-cost electronic applications due to their mechanical flexibility, compatibility with solution processing, and the ability to tune electrical properties. A critical element in OFET performance is the gate dielectric, with polymeric dielectrics such as PMMA, PVP, and polystyrene offering notable advantages in terms of processability, dielectric strength, and interface engineering. This review presents a comprehensive analysis of OFETs utilizing polymeric gate dielectrics, with a focus on the deposition of organic semiconductors by spin-coating and thermal evaporation methods. The review discusses how the interaction between polymer dielectrics and semiconductors affects charge transport, interface traps, threshold voltage, and overall device stability. Key device architectures including bottom-gate and top-gate configurations are evaluated, highlighting performance trends and material selection strategies. Finally, new designs such as bilayer dielectrics, organic–inorganic hybrid systems, and low-voltage organic field-effect transistors are considered to address issues related to environmental sensitivity and lifetime. This review aims to guide future research in optimizing material combinations and fabrication techniques to advance the practical application of polymeric-gated OFETs in next-generation electronics.

Keywords: 
organic semiconductors, organic field-effect transistors, organic gate, transistor characteristics
References: 

1. Facchetti, A., Yoon, M. H. and Marks, T. J., Adv. Mater., 17, 1705 (2005). https://doi.org/10.1002/adma.200500517

2. Nketia-Yawson, B. and Noh, Y. Y., Adv. Funct. Mater., 29, 1808423 (2019). https://doi.org/10.1002/adfm.201808423

3. Wang, Y., Huang, X., Li, T., Li, L. and Guo, X., Chem. Mater., 31, 4920 (2019). https://doi.org/10.1021/acs.chemmater.8b03904

4. Paterson, A. F., Singh, S., Fallon, K. J. and Hodsden, T., Adv. Mater., 30, 1801079 (2018). https://doi.org/10.1002/adma.201801079

5. Xu, T., Liu, Y., Bu, Y., Shu, S., Fan, S. and Cao, M., Adv. Electron. Mater., 9, 2200984 (2023). https://doi.org/10.1002/aelm.202200984

6. Park, S., Kim, S. H., Choi, H. H. and Kang, B., Adv. Funct. Mater., 30, 1904590 (2020). https://doi.org/10.1002/adfm.201904590

7. Luo, H., Yu, C., Liu, Z., Zhang, G., Geng, H., Yi, Y. and Broch, K., Sci. Adv., 2, e1600076 (2016). https://doi.org/10.1126/sciadv.1600076

8. Bulgarevich, K., Sakamoto, K. and Yasuda, T., Adv. Electron. Mater., 6, 2000161 (2020). https://doi.org/10.1002/aelm.202000161

9. Baeg, K. J., Noh, Y. Y., Ghim, J. and Lim, B., Adv. Funct. Mater., 31, 2102660 (2021).

10. Rajeev, V. R., Pillai, S. S., Nunzi, J. M. and N. U. K. N., Macromol. Mater. Eng., 307, 2100716 (2021).

11. Noh, Y. Y. and Sirringhaus, H., Org. Electron., 10, 174 (2009). https://doi.org/10.1016/j.orgel.2008.10.021

12. Zhang, F., Zhang, H., Zhu, L., Qin, L. and Wang, Y., J. Mater. Chem. C, 7, 4004 (2019). https://doi.org/10.1039/C8TC06249H

13. Sung, Y., Shin, E. Y., Noh, Y. Y. and Lee, J. Y., ACS Appl. Mater. Interfaces, 12, 1537 (2020). https://doi.org/10.1021/acsami.0c03612

14. Mei, Y., Loth, M. A., Payne, M., Zhang, W., Smith, J., Day, C. S., Parkin, S. R., Heeney, M., McCulloch, I., Anthopoulos, T. D., Anthony, J. E. and Jurchescu, O. D., Adv. Mater., 25, 4352 (2013). https://doi.org/10.1002/adma.201205371

15. Eccher, J., Zajaczkowski, W. and Faria, G. C., ACS Appl. Mater. Interfaces, 7, 20534 (2015). https://doi.org/10.1021/acsami.5b03496

16. Liu, C., Li, Y., Lee, M. V. and Kumatani, A., Phys. Chem. Chem. Phys., 15, 17756 (2013). https://doi.org/10.1039/c3cp44715d

17. Jung, H. J., Shin, Y. J., Park, Y. J. and Yoon, S. C., Adv. Funct. Mater., 20, 1660 (2010). https://doi.org/10.1002/adfm.201000032

18. Ukah, N. B., Adil, D., Granstrom, J. et al., Org. Electron., 12, 1247 (2011). https://doi.org/10.1016/j.orgel.2011.06.006

19. Voigt, M. M., Guite, A. and Chung, D. Y., Adv. Funct. Mater., 20, 2390 (2010). https://doi.org/10.1002/adfm.200901597

20. Baeg, K. J., Noh, Y. Y. and Sirringhaus, H., Adv. Funct. Mater., 20, 224 (2010). https://doi.org/10.1002/adfm.200901677

21. Roichman, Y. and Tessler, N., Appl. Phys. Lett., 80, 151 (2002). https://doi.org/10.1063/1.1431691

22. Liu, S., Wang, W. M., Briseno, A. L., Mannsfeld, S. C. B. and Bao, Z., Adv. Mater., 21, 1217 (2009). https://doi.org/10.1002/adma.200802202

23. Irimia Vladu, M., Marjanovic, N., Vlad, A. et al., Adv. Mater., 20, 1018 (2008). https://doi.org/10.1002/adma.200701479

24. Eccher, J., Zajaczkowski, W. and Faria, G. C., ACS Appl. Mater. Interfaces, 7, 16374 (2015). https://doi.org/10.1021/acsami.5b03496

25. Rajesh, K. R. et al., Bull. Mater. Sci., 37, 95 (2014). https://doi.org/10.1007/s12034-014-0616-y

26. Unni, K. N., Dabos Seignon, S. and Nunzi, J. M., Chem. Phys. Lett., 421, 554 (2006). https://doi.org/10.1016/j.cplett.2006.01.113

27. Soldano, C., Materials, 14, 3756 (2021). https://doi.org/10.3390/ma14133756

28. Wang, Y., Huang, X., Li, T., Li, L. and Guo, X., Chem. Mater., 33, 3135 (2021).

29. Nketia Yawson, B. and Noh, Y. Y., Adv. Funct. Mater., 32, 2108664 (2022). https://doi.org/10.1002/adfm.202108215

30. Lei, Y., Wu, B., Chan, W. K. E., Zhu, F. and Ong, B. S., J. Mater. Chem. C, 10, 4567 (2022). https://doi.org/10.1039/D2TC01946A

31. Baeg, K. J., Facchetti, A. and Noh, Y. Y., J. Mater. Chem., 9, 13895 (2021).

32. Yang, H., Kim, S. H., Yang, L. and Yang, S. Y., Adv. Mater., 33, 2007844 (2021). https://doi.org/10.1002/adma.202170353

33. Yoon, M. H., Kim, C. and Facchetti, A., J. Am. Chem. Soc., 144, 1121 (2022). https://doi.org/10.1021/jacs.2c00039

34. Baeg, K. J., Noh, Y. Y., Ghim, J. and Lim, B., J. Mater. Chem., 22, 21138 (2012). https://doi.org/10.1039/c2jm34218a

35. Cui, T., Liang, G. and Varahramyan, K., IEEE Electron Device Lett., 24, 420 (2003).

36. Noh, Y. Y. and Sirringhaus, H., Org. Electron., 102, 106553 (2022).

37. Eccher, J., Zajaczkowski, W. and Faria, G. C., ACS Appl. Mater. Interfaces, 7, 20534 (2015). https://doi.org/10.1021/acsami.5b03496

38. Ukah, N. B., Adil, D., Granstrom, J. et al., Org. Electron., 12, 1247 (2011). https://doi.org/10.1016/j.orgel.2011.06.006

39. Voigt, M. M., Guite, A. and Chung, D. Y., Adv. Funct. Mater., 20, 2390 (2010). https://doi.org/10.1002/adfm.200901597

40. Irimia Vladu, M., Marjanovic, N., Vlad, A. et al., Adv. Mater., 20, 3573 (2008). https://doi.org/10.1002/adma.200801024

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