Funct. Mater. 2026; 33 (2): 231-237.

In this work, for the first time, thin films were obtained by depositing InSb⁺ ions on various surfaces (sapphire, glass, silicon) using LMAIS (Liquid Metal Alloy Ion Source). The non-uniformity of the thin film thickness was associated with the radial distribution of the ion beam current. The radial distribution was measured at different values of the total beam current (30µA, 50µA) and the current density value at each point was calculated according to the beam current values recorded on the moving substrate. To minimize the effect of the radial distribution, it was decided to rotate the substrate during ion emission. At the same time, the sample was heated to a certain temperature on the rotating substrate. As a result, the noticeable difference in thickness between the center and the edges disappeared in the obtained samples. To create a special structure in the samples (ceramic substrate), thin InSb layers of the required dimensions were obtained using dielectric masks. The formation of a thin InSb layer was confirmed by the temperature dependence of the resistance of samples deposited on a ceramic substrate, as well as by the Raman spectrum of samples deposited on sapphire. Obtaining uniform InSb thin layers allows us to expand the scope of their application. SEM images of the resulting samples showed that the noticeable thickness difference between the center and the edges was eliminated. Raman spectra, X-ray diffraction patterns and the temperature dependence of the electrical resistance of the obtained layers confirm the formation of the InSb phase.